4H-SiC trench MOSFET with integrated fast recovery MPS diode

作者：Dai, Tianxiang^*; Chan, Chun Wa; Deng, Xc; Jiang, Huaping; Gammon, Peter M.; Jennings, Mike R.; Mawby, Phil A.

来源：Electronics Letters, 2018, 54(3): 167-169.

DOI：10.1049/el.2017.3198

• p-i-n diodes
• MOSFET
• Schottky diodes
• Schottky barriers
• semiconductor device reliability
• silicon compounds
• wide band gap semiconductors
• integrated fast recovery MPS diode
• metal-oxide-semiconductor field-effect-transistor
• 4H-silicon carbide MOSFET design
• integrated merged PiN Schottky diode
• Schottky contact
• electric field
• Schottky contact surface
• integration design
• oxide reliability
• leakage reduction
• total chip area
• external Schottky diode
• SiC

A 4H-SiC trench metal-oxide-semiconductor field-effect-transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.

• 出版日期2018-2-8
• 单位电子科技大学