High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator

作者：Kim Young Mo; Park Chulkwon; Kim Useong; Ju Chanjong; Char Kookrin^*

来源：Applied Physics Express, 2016, 9(1): 011201.

DOI：10.7567/APEX.9.011201

Thin-film transistors have been fabricated using La-doped BaSnO3 as n-type channels and (In,Sn)(2)O-3 as source, drain, and gate electrodes. HfO2 was grown as gate insulators by atomic layer deposition. The field-effect mobility, I-on/I-off ratio, and subthreshold swing of the device are 24.9cm(2)V(-1) s(-1), 6.0 x 10(6), and 0.42 V dec(-1), respectively. The interface trap density, evaluated to be higher than 10(13) cm(-2) eV(-1), was found to be slightly lower than that of the thin-film transistor with an Al2O3 gate insulator. We attribute the much smaller subthreshold swing values to the higher dielectric constant of HfO2.

• 出版日期2016-1