Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

作者：Jariwala Deep; Dayoyan Artur R; Tagliabue Giulia; Sherrott Michelle C; Wong Joeson; Atwater Harry A

来源：Nano Letters, 2016, 16(9): 5482-5487.

DOI：10.1021/acs.nanolett.6b01914

• Transition metal dichalcogenides
• heterostructures
• light:trapping broadband
• near-unity absorption
• photovoltaics

We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

• 出版日期2016-9