Phase transition and optical properties of Ge doped ZnO films synthesised by sputtering

作者：Fan, D. H.^*; Zhang, R.; Su, W. A.; Zhang, J. Z.

来源：Materials Science and Technology, 2015, 31(1): 37-42.

DOI：10.1179/1743284714Y.0000000588

• Ge doped ZnO film
• Phase transition
• Optical properties

Ge doped ZnO films were deposited on Si substrates by sputtering technique. With the increasing annealing temperature, the crystal quality of samples becomes gradually better and the phase transition can be observed at annealing temperature of 600 degrees C. X-ray photoelectron spectroscopy results show the incorporation of Ge into the ZnO films with 14.81 at-% Ge content. Fourier transform infrared spectroscopy absorption spectra of samples annealed at above 600 degrees C display vibration mode of v ( ZnO4) and v (GeO4) in Zn2GeO4. The enhancement of ultraviolet emission intensity should be attributed to the yielded mass holes caused by Ge doping and the rising crystal quality. The sample annealed at 800 degrees C displays the strongest blue emission due to the native defects in Zn2GeO4 films or/and surface defects.

• 出版日期2015-1
• 单位江西理工大学; 五邑大学; 上海海事大学