摘要

D0(22)-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm(3), high magnetic anisotropy (Ku) of 9.1 Merg/cm(3) and low surface roughness (Ra) of 0.30 nm were obtained by D0(22)-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at T-s = 300 degrees C, T-a = 400 degrees C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

  • 出版日期2018-5

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