Performance of a GaAs-Based Pseudomorphic Transistor with the Electroless-Plated Surface Treated Gate

作者：Chen Li Yang^*; Chen Huey Ing; Cheng Shiou Ying; Tsai Tsung Han; Liu Yi Jung; Huang Chien Chang; Chen Tai You; Hsu Chi Hsiang; Liu Wen Chau

来源：Journal of the Electrochemical Society, 2010, 157(4): H408-H413.

DOI：10.1149/1.3289730

• aluminium compounds
• atomic force microscopy
• Auger electron spectra
• electrodeposition
• electrodeposits
• gallium arsenide
• III-V semiconductors
• indium compounds
• leakage currents
• scanning electron microscopy
• Schottky barriers
• semiconductor-metal boundaries
• surface treatment
• thin film transistors
• transistors

An interesting GaAs-based pseudomorphic transistor with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low temperature and low energy electrochemical deposition conditions, the EP deposition approach can form a better metal-semiconductor interface with the reduction of surface thermal damages and disordered states. The material analyses of the EP deposition approach, including Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy, are examined. The device characteristics including dc, microwave, and reliability performances are investigated. In addition, the temperature influences of the studied devices, at the temperature regime of 300-500 K, are studied. As compared with the conventional thermal evaporation approach, the EP-based device shows significantly improved dc characteristics over a wide temperature range (300-500 K). Moreover, the EP approach also has the advantages of easy operation and low cost.

• 出版日期2010