摘要

In this paper, heat conduction and thermo-elasticity models of repetitive pulse laser irradiation are established, and analytical solutions for temperature and thermal-stress of solid material induced by repetitive pulse laser irradiation are obtained using integral transform method. Temperature and thermal-stress distributions of solid silicon material for different parameters are given. Results show that, when the silicon irradiated by a repetitive pulse laser, temperature and thermal-stress accumulation effects will occur on the surface and inside the material. Temperature and thermal-stress rise in the laser irradiating cycle time and decrease in the cooling cycle time. In the thin layer of silicon surface vicinity, temperature and thermal-stress rise due to absorption of irradiated energy dominates over the conduction energy transport from surface to vicinity. As the depth increases, the absorption decreases, whereas the conduction enhances. The results of this study can give some theoretical basis for revealing the mechanism of repetitive pulse laser irradiation and provide some guidance for experiments of repetitive pulse laser irradiation in the next work.