Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias-controllable field plate

作者：Mase Suguru; Wakejima Akio; Egawa Takashi

来源：Physica Status Solidi A-Applications and Materials Science, 2017, 214(8): 1600840.

DOI：10.1002/pssa.201600840

• AlGaN
• charge carrier trapping
• field Plate
• GaN
• high electron mobility transistors
• Si3N4

We analyzed carrier trapping in AlGaN/GaN HEMT occurring between gate and drain with a bias-controllable Field Plate (CFP) on a Si3N4 passivation, which is structurally and electrically independent from other electrodes. We observed the recovery of a transient drain current which was associated with carrier emission after the momentary pulse bias of CFP. From the temperature dependence of pulsed I-V measurements, an activation energy of the trap state was 0.083eV and capture cross section was 2.0x10(-24)cm(-2). This value is the same to the activation energy of the surface leakage current in AlGaN/GaN HEMT with Si3N4 passivation. The trap state with the activation energy of 0.083eV has important role in pulse operation of AlGaN/GaN FP-HEMT with Si3N4 passivation.

• 出版日期2017-8