Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

作者：Lee J H^*; Ke X; Misra R; Ihlefeld J F; Xu X S; Mei Z G; Heeg T; Roeckerath M; Schubert J; Liu Z K; Musfeldt J L; Schiffer P; Schlom D G

来源：Applied Physics Letters, 2010, 96(26): 262905.

DOI：10.1063/1.3457786

• absorption coefficients
• bismuth compounds
• energy gap
• magnetic epitaxial layers
• molecular beam epitaxial growth
• multiferroics
• X-ray diffraction

We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with omega rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 degrees). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1 +/- 0.1 eV.

• 出版日期2010-6-28