摘要

The diffusion of Al into tris-(8-hydroquinoline) aluminum (Alq(3)) was studied using in situ medium energy ion scattering (MEIS) spectroscopy. Al was thermally deposited on an Alq(3) thin film in a stepwise manner, with MEIS performed after each deposition step. At the initial stage of interface formation, Al diffuses deep into the Alq(3) layer and reaches the bottom of the Alq(3) layer of thickness 20 nm. Some Al is stacked at the surface of Alq(3) and starts to form an Al layer. The deep diffusion of Al is diminished when sufficient Al aggregates at the surface. After this stage, Al is stacked only at the surface, but does not diffuse into the Alq(3) film.

  • 出版日期2008-10-13