摘要
Here, we report that highly conductive polycrystalline anatase Nb-doped TiO2 (TNO) thin films can be prepared via crystallization of amorphous precursors under N-2 atmosphere. An optimized TNO film on a glass substrate exhibited a low resistivity of 8.4 x 10(-4) Omega cm and an absorbance of 6% at a wavelength of 460 nm. These transport and optical properties were comparable to those of TNO films fabricated by vacuum annealing. This demonstrates the potential of TNO as an electrode for GaN-based light-emitting diodes.
- 出版日期2012-11