Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications

作者：Jhansirani K; Dubey R S^*; More M A; Singh Shyam

来源：Results in Physics, 2016, 6: 1059-1063.

DOI：10.1016/j.rinp.2016.11.029

• Chemical vapor deposition
• Deposition temperature
• Refractive index
• Reflectance
• Antireflection coating

Silicon nitride is a versatile material since many decades due to its compatibility with conventional fabrication technology. Other than its potential applications in microelectronics, this material has been regarded as an antireflection coating in solar cells. In this paper, we present the fabrication and characterization of silicon nitride (Si3N4) films deposited at 750, 800 and 850 degrees C using atmospheric chemical vapor deposition. We have investigated the effect of deposition temperature on the physical and optical properties of the prepared films. The refractive index and film thickness were found to be increased in accordance with an increase in the deposition temperature. Fourier transform infrared (FTIR) spectroscopy analysis showed the Si-N-Si stretching peak at 917 cm(-1) further, the full width at half maxima and Si-N-Si peak position showed their dependency on the deposition temperature. Finally, the optimal reflectance was observed through Si3N4 film deposited at temperature 800 degrees C which confirms its suitability as an antireflection coating.

• 出版日期2016