The effects of swift heavy-ion irradiation on helium-ion-implanted silicon

作者：Li, B. S.^*; Du, Y. Y.; Wang, Z. G.; Shen, T. L.; Li, Y. F.; Yao, C. F.; Sun, J. R.; Cui, M. H.; Wei, K. F.; Zhang, H. P.; Shen, Y. B.; Zhu, Y. B.; Pang, L. L.

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2014, 337: 21-26.

DOI：10.1016/j.nimb.2014.07.010

• He bubbles
• Ar-ion irradiation
• Strong electronic excitation
• Microstructure

Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. (100)-oriented silicon wafers were implanted with 30 key helium to a dose of 3 x 10(16) He/cm(2) at 600 K. Subsequently, the helium-implanted Si wafers were irradiated with 792 MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073 K for 30 min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed.

• 出版日期2014-10-15
• 单位中国科学院近代物理研究所