High Holding Voltage SCR-LDMOS Stacking Structure With Ring-Resistance-Triggered Technique

作者：Ma, Fei^*; Zhang, Bin; Han, Yan; Zheng, Jianfeng; Song, Bo; Dong, Shurong; Liang, Hailian

来源：IEEE Electron Device Letters, 2013, 34(9): 1178-1180.

DOI：10.1109/LED.2013.2272591

• Electrostatic discharge (ESD)
• holding voltage
• latch-up immunity
• laterally diffused metal-oxide-semiconductor (LDMOS)
• SCR

A novel ring-resistance-triggered stacked SCR-laterally diffused MOSs has been successfully verified in a 0.35 mu m, 30-V/5-V bipolar CMOS DMOS process to solve the coupling of trigger voltage and holding voltage in stacking structures. The holding voltage of the proposed structure can be modulated by varying stacking numbers, and a high holding voltage of 22 V has been achieved using six stacks. On the other side, the trigger voltage almost keeps constant at similar to 53 V and a high failure current of 3.5 A has been achieved.

• 出版日期2013-9
• 单位浙江大学