Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy

作者：Kumar Mahesh; Rajpalke Mohana K; Roul Basanta; Bhat Thirumaleshwara N; Kalghatgi A T; Krupanidhi S B^*

来源：Physica Status Solidi B-Basic Solid State Physics, 2012, 249(1): 58-61.

DOI：10.1002/pssb.201147318

• band offset
• GaN
• heterojunctions
• MBE
• nitridation
• XPS

Hexagonal Ge3N4 layer was prepared on Ge surface by in situ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge3N4/Ge heterojunctions is determined by X-ray photoemission spectroscopy. The valence band (VB) of Ge3N4 is found to be 0.38?+/-?0.04?eV above the GaN valance band and 1.14?+/-?0.04?eV below the Ge. The GaN/Ge3N4 and Ge3N4/Ge are found type-II and type-I heterojunctions, respectively. The exact measurements of the VBO and conduction band offset (CBO) are important for use of GaN/Ge3N4/Ge (111) heterosystems.

• 出版日期2012-1