Application of PEM and OBIRCH to defect localization of integrated circuits

作者：Lian, Jian Wen^*; Lin, Xiao Ling; Yao, Ruo He

来源：3rd International Conference on Materials Science and Manufacturing, ICMSM 2014, Yichang, 2014-01-10 To 2014-01-12.

DOI：10.4028/www.scientific.net/AMR.904.277

• Defect localizations
• EMMI
• Fault characterization
• Micro-electronic devices
• OBIRCH
• Optical beam induced resistance changes
• PEM
• Photon emission microscopy

With the increasing integration and complexity of microelectronic devices, fault isolation has been challenged. Photon Emission Microscopy (PEM) and Optical Beam Induced Resistance Change (OBIRCH) are effective tools for defect localization and fault characterization in failure analysis. In this paper, the principles and different application condition of PEM and OBIRCH are discussed. PEM is very helpful for locating defects emitting photon, but can not detect the defects which have no photon emitting, such as shorted metal interconnects;OBIRCH as a complementary, has a high success rate for locating resistance defects. Two cases with failure mechanisms illuminated are presented to show the different application of PEM and OBIRCH.

• 出版日期2014
• 单位华南理工大学