A 0.8-V 110-nA CMOS current reference circuit using subthreshold operation

作者:Homjakovs Igors*; Hirose Tetsuya; Osaki Yuji; Hashimoto Masanori; Onoye Takao
来源:IEICE Electronics Express, 2013, 10(4): 20130022.
DOI:10.1587/elex.10.20130022

摘要

This paper proposes a low voltage CMOS nano-ampere current reference circuit and presents its performance with circuit simulations in 180-nm technology. The proposed circuit consists of biasvoltage, current-source and offset-voltage sub-circuits with most of MOSFETs operating in subthreshold region. Simulation results show that the circuit generates a stable reference current of 110-nA in supply voltage range of 0.8-1.8-V with line sensitivity of 9250 ppm/V. The proposed circuit is useful for composing a voltage reference circuit for ultra-low power applications.

  • 出版日期2013