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摘要
This paper demonstrates the realization of submicrometric patterns by using standard photolithography (365 nm). Significant improvements in standard photolithography resolution can be achieved with specific conditions of a very thin layer of photoresist (0.13 mu m). Usually, standard photolithography has a resolution limit of about 1 mu m. Firstly, using Kirchhoff diffraction theory we show that with these new conditions the theoretical resolution limit could be 0.4 mu m. Secondly, in the experimental part, the realization of 0.8 mu m size patterns is demonstrated.
- 出版日期2009-1-7
