UV electroluminescence from p-ZnO:P/n-ZnO homojunction diode

作者：Nagar S^*; Chakrabarti S

来源：Electronics Letters, 2014, 50(18): 1307-1308.

DOI：10.1049/el.2014.2055

The reliability of p-type ZnO thin films obtained by phosphorus implantation, using plasma-immersion ion implantation, followed by rapid thermal annealing is reported. Also reported is the fabrication of a ZnO-based homojunction light-emitting diode. Low-temperature photoluminescence measurements after six months showed a dominant free electron-to-acceptor peak for samples annealed at 900 and 1000 degrees C, confirming the formation of p-type films. Room-temperature electroluminescence spectra for the p-ZnO:P/n-ZnO homojunction diode revealed ultraviolet (UV) emission at 3.18 eV; however, the dominant peak was observed at 1.8 eV because of a deep-level defect peak. Achieving dominant UV emission requires further optimisation of the device structure.

• 出版日期2014-8-28