A DLTS study of hydrogen doped czochralski-grown silicon

作者：Jelinek M^*; Laven J G; Kirnstoetter S; Schustereder W; Schulze H J; Rommel M; Frey L

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2015, 365: 240-243.

DOI：10.1016/j.nimb.2015.07.078

• Deep level defects
• Proton implantation
• Silicon

In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10-15 mu m deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

• 出版日期2015-12-15