Low temperature growth of Co2MnSi films on diamond semiconductors by ion-beam assisted sputtering

作者：Nishiwaki M; Ueda K^*; Asano H

来源：Journal of Applied Physics, 2015, 117(17): 17D719.

DOI：10.1063/1.4917466

High quality Schottky junctions using Co2MnSi/diamond heterostructures were fabricated. Low temperature growth at similar to 300-400 degrees C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co2MnSi/diamond interfaces. Only the Co2MnSi films formed at similar to 300-400 degrees C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co2MnSi films, of similar to 0.3% at 10 K. Schottky junctions formed using the Co2MnSi films showed clear rectification properties with rectification ratio of more than 10(7) with Schottky barrier heights of similar to 0.8 eV and ideality factors (n) of similar to 1.2. These results indicate that Co2MnSi films formed at similar to 300-400 degrees C by IBAS are a promising spin source for spin injection into diamond semiconductors.

• 出版日期2015-5-7