A low-voltage, low-power voltage reference based on subthreshold MOSFETs

作者：Dong, Liangwei^*; Hu, Yueli

来源：Modern Physics Letters B, 2017, 31(19-21): 1740069.

DOI：10.1142/S0217984917400693

• CMOS voltage reference
• low voltage
• low power
• temperature compensation

A novel low-voltage low-power CMOS voltage reference independent of temperature is presented in this design. After considering the combined effect of (1) a perfect suppression of the temperature dependence of mobility; (2) the compensation of the channel length modulation effect on the temperature coefficient, a temperature coefficient of 10 ppm/degrees C is achieved. Moreover, by adopting the subthreshold MOSFETs, there are no resistors used in the proposed structure. Therefore, the maximum supply current measured at the maximum supply voltage is 70 nA and at 80 degrees C. The circuit can be used as a voltage reference for high performance and low power dissipation on a single chip.

• 出版日期2017-7-30
• 单位常州工学院; 上海大学