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摘要
B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge. We find two distinct self-interstitial forms-a simple one with low entropy and a complex one with entropy similar to 30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket-we name it a morph. Computational modeling suggests that morphs exist in both self-interstitial and vacancylike forms, and are crucial for diffusion and defect dynamics in Ge, Si, and probably many other crystalline solids. DOI:10.1103/PhysRevLett.110.155501
- 出版日期2013-4-8
- 单位中国地震局
