科研之友
微信
新浪微博
Facebook
分享链接
摘要
ZnIn2Se4 thin films were deposited by flash evaporation of bulk material onto glass and pyrographite substrates under vacuum. The surface aspects of films have been studied by scanning electron microscopy. The dynamic and static current (I) versus voltage (V) characteristics of brass/pyrographite/ZnIn2Se4 thin film/platinum sandwiched devices for different film thicknesses (350-650 nm) and temperatures (313-353 K) were measured. The OFF state I-V characteristics of fabricated thin film devices indicated that the conduction mechanism is of the Poole-Frenkel type. In addition, a threshold memory switching mechanism from a high resistance OFF state to a low resistance ON state was observed in these thin film structures. The I-V characteristics of the memory device were studied at different annealed and ambient temperatures. The threshold voltage was found to increase linearly with film thickness and decrease exponentially with ambient temperature. The results obtained were discussed, and a thermal model for initiating the switching process in this device system could be indicated.
- 出版日期2015-7
