Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric

作者：Ortiz Deliris N; Ramos Idalia; Pinto Nicholas J^*; Zhao Meng Qiang; Kumar Vinayak; Johnson A T Charlie

来源：AIP Advances, 2018, 8(3): 035014.

DOI：10.1063/1.5020443

CVD grown MoSe2 monolayers were electrically characterized at room temperature in a field effect transistor (FET) configuration using an ionic liquid (IL) as the gate dielectric. During the growth, instead of using MoO3 powder, ammonium heptamolybdate was used for better Mo control of the source and sodium cholate added for lager MoSe2 growth areas. In addition, a high specific capacitance (similar to 7 mu F/cm(2)) IL was used as the gate dielectric to significantly reduce the operating voltage. The device exhibited ambipolar charge transport at lowvoltages with enhanced parameters during n- and p-FET operation. IL gating thins the Schottky barrier at the metal/semiconductor interface permitting efficient charge injection into the channel and reduces the effects of contact resistance on device performance. The large specific capacitance of the IL was also responsible for a much higher induced charge density compared to the standard SiO2 dielectric. The device was successfully tested as an inverter with a gain of similar to 2. Using a common metal for contacts simplifies fabrication of this ambipolar device, and the possibility of radiative recombination of holes and electrons could further extend its use in low power optoelectronic applications.

• 出版日期2018-3