Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

作者：Wang Y Y^*; Cooper D; Rouviere J; Murray C E; Bernier N; Bruley J

来源：Applied Physics Letters, 2015, 106(4): 042104.

DOI：10.1063/1.4906513

The detailed strain distributions produced by embedded SiGe stressor structures are measured at high spatial resolution with high precision, with dual lens dark field electron holography and precession electron diffraction. Shear strain and lattice rotation within the crystalline lattice are observed at the boundaries between the SiGe and Si regions. The experimental results are compared to micromechanical modeling simulations to understand the mechanisms of elastic relaxation on all the modes of deformation at a sub-micron length scale.

• 出版日期2015-1-26
• 单位中国地震局; IBM