A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si

作者：Chen Renyu^*; Wagner Hannes; Dastgheib Shirazi Amir; Kessler Michael; Zhu Zihua; Shutthanandan Vaithiyalingam; Altermatt Pietro P; Dunham Scott T

来源：Journal of Applied Physics, 2012, 112(12): 124912.

DOI：10.1063/1.4771672

Effective control of the dose of diffused phosphorus emitter profiles is crucial for optimization of crystalline silicon solar cells, but it requires detailed understanding of the POCl3 doping process. We measure concentration profiles within the deposited phosphosilicate glass (PSG) layer for a range of POCl3 doping conditions and find that (i) its composition is nearly independent of process conditions and (ii) it is separated from Si by a thin SiO2 layer. We also find strong accumulation of P at the SiO2-Si interface. As common linear-parabolic models cannot fully explain the observed kinetics of PSG thickness and phosphorus dose in Si, we present an improved model including oxygen depletion and dose saturation, giving a better explanation of the experimental data. In contrast to previous models that adjust the peak phosphorus concentration at the Si surface to match the measured profiles, our models accurately predict the time-dependent dose behavior under different experimental conditions. We further couple this growth model with previously reported phosphorus diffusion and deactivation models in silicon, providing full modeling of the POCl3 doping process.

• 出版日期2012-12-15