Stress damage process of silicon wafer under millisecond laser irradiation

作者：Jia, Zhichao; Zhang, Tingzhong; Zhu, Huazhong; Li, Zewen; Shen, Zhonghua; Lu, Jian; Ni, Xiaowu^*

来源：Chinese Optics Letters, 2018, 16(1): 011404.

DOI：10.3788/COL201816.011404

The stress damage process of a single crystal silicon wafer under millisecond laser irradiation is studied by experiments and numerical simulations. The formation process of low-quality surface is monitored in real-time. Stress damage can be observed both in laser-on and -off periods. Plastic deformation is responsible for the first stress damage in the laser-on period. The second stress damage in the laser-off period is a combination of plastic deformation and fracture, where the fundamental cause lies in the residual molten silicon in the ablation hole.

• 出版日期2018-1-10
• 单位周口师范学院; 南京理工大学