A dual-band class-E power amplifier with concurrent matching network in 0.18-mu m CMOS

作者：Lin Wen Jie; Huang Po Shun; Cheng Jen Hao; Tsai Jeng Han; Alsuraisry Hamed; Huang Tian Wei

来源：Microwave and Optical Technology Letters, 2018, 60(7): 1672-1675.

DOI：10.1002/mop.31220

• class-E
• CMOS
• concurrent
• dual-band
• impedance matching network
• power amplifier (PA)

In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-mu m CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain >= 8.4 dB, P-sat >= 21.4 dBm with power added efficiency >= 31% in a compact chip size of 0.5 mm(2). This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm(2)) with other state-of-the-art class-E PAs at higher frequency.

• 出版日期2018-7