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摘要
Direct current sputtering was used for deposition of Si film for precursor film of excimer laser annealing, n(+)-Si/p(+)-Si film for source/drain contact, and SiO2 film for gate insulator of polycrystalline silicon thin-film transistor. Using these methods, poly-Si thin-film complementary metal oxide semiconductor inverter was fabricated by all sputtering process for the first time. The field-effect mobility was, respectively, 6.5 and 12.5 cm(2)/Vs for n-TFTs and p-TFTs. This inverter exhibits a full rail-to-rail swing and abrupt voltage transfer characteristics over the entire voltage range, and the output voltage gain was similar to 117 at V-dd = 20V.
- 出版日期2014-7
