Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory

作者：Chou Kun I^*; Cheng Chun Hu; Chen Po Chun; Yeh Fon Shan; Chin Albert

来源：Japanese Journal of Applied Physics, 2011, 50(12): 121801.

DOI：10.1143/JJAP.50.121801

In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0.5Ti0.5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10(2), for 85 degrees C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

• 出版日期2011-12
• 单位清华大学