Numerical modeling of MOS transistor with interconnections using lumped element-FDTD method

作者：Labiod Samir^*; Latreche Saida; Gontrand Christian

来源：Microelectronics Journal, 2012, 43(12): 995-1002.

DOI：10.1016/j.mejo.2012.10.005

• Mos transistor
• Implicit backward Euler
• Finite difference time domain (FDTD)
• S-parameters

A detailed three-dimensional (3-D) full-wave time-domain simulation model is presented for the analysis of an active semiconductor device. Microwave analysis of the nMOS transistor using monolithic microwave integrated circuit (MMIC) is simulated. A three-dimensional finite-difference time-domain (3D-FDTD) scheme is adopted to describe the circuit passive part, whereas numerical device simulation techniques are employed for the active semiconductor devices. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers' concentration, and current density for the MOS transistor. Fast Fourier transform (FFT) analysis is performed on the obtained time response to calculate the scattering matrix of the S-parameters and phase frequency dependencies. Finally, the obtained results are presented and show a good agreement with those based on a hydrodynamic model.

• 出版日期2012-12