Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs

作者：Ghanatian Hamdam^*; Hosseini Seyed Ebrahim

来源：Journal of Computational Electronics, 2016, 15(2): 508-515.

DOI：10.1007/s10825-016-0817-2

• Analytical model
• Trigate SOI MOSFET
• 3-D Poisson's equation
• Parabolic potential distribution
• Subthreshold swing
• Conduction path
• Mobile charges

A new analytical model for the subthreshold swing of nanoscale undoped trigate silicon-on-insulator metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed, based on the channel potential distribution and physical conduction path concept. An analytical model for the potential distribution is obtained by solving the three-dimensional (3-D) Poisson's equation, assuming a parabolic potential distribution between the lateral gates. In addition, mobile charges are considered in the model. The proposed analytical model is investigated and compared with results obtained from 3-D simulations using the ATLAS device simulator and experimental data. It is demonstrated that the analytical model predicts the subthreshold swing with good accuracy for different lengthes, thicknesses, and widths of channel.

• 出版日期2016-6