Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

作者：Hamada Takahiro^*; Ito Akihiro; Nagao Nobuaki; Suzuki Nobuyasu; Fujii Eiji; Tsujimura Ayumu

来源：Japanese Journal of Applied Physics, 2013, 52(4).

DOI：10.7567/JJAP.52.04CH04

We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 x 10(18) cm(-3), an electron mobility of 41 cm(2)/(V.s), and a resistivity of 2.2 x 10(-2) Omega.cm. A low specific contact resistivity of 4.3 x 10(-3) Omega.cm(2) was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

• 出版日期2013-4