Analytical model for quasi-static C-V characteristics of strained-Si/SiGe pMOS capacitor

作者：Wang, Bin^*; Zhang, He-Ming; Hu, Hui-Yong; Shu, Bin; Zhou, Chun-Yu; Li, Yu-Chen

来源：Solid-State Electronics, 2013, 79: 258-261.

DOI：10.1016/j.sse.2012.09.002

• Strained-Si
• pMOS capacitor
• C-V characteristic
• Doping concentration

An analytical model for quasi-static C-V characteristics of strained-Si/SiGe pMOS capacitor is presented. By analyzing the model, the dependence of the C-V characteristics on the strained-Si layer thickness, doping concentration and Ge fraction is studied. Also, the reason of the shift of the plateau, observed in the gate C-V characteristics of the strained-Si pMOS capacitor, from the inversion region to the accumulation region as doping concentration increasing, has been explained. The results from the models show excellent agreement with the simulations and experimental data. The proposed models can be used to guide the design and has been implemented in the software for extracting the parameter of strained-Si MOSFET.

• 出版日期2013-1
• 单位西安电子科技大学