Novel k-restoring scheme for damaged ultra-low-k materials

作者：Boehm O^*; Leitsmann R; Plaenitz Ph; Oszinda T; Schaller M; Schreiber M

来源：Microelectronic Engineering, 2013, 112: 63-66.

DOI：10.1016/j.mee.2013.05.017

• ULK
• Ultra low k
• k-Restoring
• DFT
• Ab initio

In this study we have investigated the silylation of hydroxyl groups in carbon depleted ultra-low-k materials with different silylation agents - the so called k-restoring process. All calculations are based on density-functional theory using a GGA-PBE functional. We have compared the silylation performance of several silylation agents with respect to thermochemical parameters and the size of the molecules, which is a restricting factor for the diffusion inside porous ultra-low-k materials. Under these circumstances bis(dimethylamino)dimethylsilane (DMADMS) is one of most promising silylation agents. We have also studied additionally undesirable side reactions. We found that the usage of repair chemicals with two reactive groups can lead to a polymerisation of siloxane chains and a carbon depletion in the presence of water. Therefore, we have developed a novel k-restoring scheme, where we recommend the combined usage of repair chemicals with one and two reactive groups. We have shown that the most effective combination is hexamethyldisilazane (HMDS) and DMADMS.

• 出版日期2013-12