Design Space Exploration of Hysteresis-Free HfZrOx-Based Negative Capacitance FETs

作者：Sharma Ankit^*; Roy Kaushik

来源：IEEE Electron Device Letters, 2017, 38(8): 1165-1167.

DOI：10.1109/LED.2017.2714659

• Negative capacitance FET (NCFET)
• ferroelectrics
• subthreshold swing (SS)
• fully depleted silicon-on-insulator (FDSOI)
• FinFETs

In this letter, we investigate the design space of hysteresis-free negative capacitance FETs (NCFETs) by performing a cross-architecture analysis using HfZrOx ferroelectric (FE-HZO) integrated on bulk MOSFET, fully depleted SOI-FETs, and sub-10-nm FinFETs. Our simulation analysis shows that FDSOI and FinFET configurations greatly benefit the NCFET performance due to their undoped body and improved gate-control, which enables better capacitance matching with the ferroelectric. A low-voltage NC-FinFET operating down to 0.25 V is predicted using ultra-thin 3-nm FE-HZO.

• 出版日期2017-8