MOVPE growth of AlxIn1-xP using tertiarybutylphosphine in pure N-2 ambient

作者：Zhao Jinghua; Tang Xiaohong^*; Yin Zongyou; Sentosa Deny

来源：Thin Solid Films, 2007, 515(10): 4454-4458.

DOI：10.1016/j.tsf.2006.07.160

• MOVPE
• TBP
• AlInP

We have investigated metalorganic vapor phase epitaxy (MOVPE) growth of AlxIn1-xP alloy using tertiarybutylphosphine (TBP) as the phosphorus source in pure N-2 ambient. The effect of the substrate temperature on the aluminum composition of AlxIn1-xP epilayers during the MOVPE growth has been studied. When the source flow rates were kept unchanged, the aluminum composition of the AlxIn1-xP epilayer increased monotonically when the substrate temperature, T-g, was raised from 580 degrees C to 660 degrees C during the growth. It became saturated when T, reached 660 degrees C and above. The crystalline quality of the grown AlxIn1-xP epilayers has been investigated by X-ray diffraction and photoluminescence measurements. A linear relationship between the aluminum composition of the AlxIn1-xP epilayer and TMA1/(TMA1 + TMIn) source flow ratio has been obtained when grown at the optimized growth temperature of T-g=630 degrees C. It has also been observed that the aluminum incorporation coefficient of AlxIn1-xP epilayers decreased when the V/III source flow ratio was increased during the MOVPE growth.

• 出版日期2007-3-26
• 单位南阳理工学院