MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

作者：Lemettinen J^*; Okumura H; Kim I; Kauppinen C; Palacios T; Suihkonen S

来源：Journal of Crystal Growth, 2018, 487: 12-16.

DOI：10.1016/j.jcrysgro.2018.02.013

• Polarity
• X-ray diffraction
• Metal-organic vapor phase epitaxy
• Nitrides
• Semiconducting aluminum compounds

We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <(1) over bar 100 > by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 degrees and 4 degrees miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1 degrees towards <(1) over bar 100 >. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (002) and (102) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 mu m x 2 mu m atomic force microscope scan.

• 出版日期2018-4-1
• 单位MIT