Ultra-Wideband Microwave Generation Using a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Ultrafast Switching

作者：Hu, Long^*; Su, Jiancang; Qiu, Ruicheng; Fang, Xu

来源：IEEE Transactions on Electron Devices, 2018, 65(4): 1308-1313.

DOI：10.1109/TED.2018.2802642

• Multiple avalanche domains
• photoconductive semiconductor switch (PCSS)
• ultra-wideband microwave
• ultrafast switching

Generation of ultra-wideband microwave utilizing a low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switch with ultrafast switching is presented. The switch biased at 5.2 kV is able to reach the conducting state with a time as low as similar to 200 ps, and a 5.6-nJ laser is required. The switching transient features such as delay, ultrafast switching, and voltage locking are described and explained by multiple powerful avalanche domains, and a comparison with previous discussions and findings available in the literatures is provided. The application of the bulk GaAs avalanche semiconductor switches for generating ultra-wideband microwave is demonstrated. We produce a bipolar pulse with peak-to-peak voltage amplitude of similar to 5 kV and a unipolar pulse with peak amplitude of similar to 10 kV.

• 出版日期2018-4
• 单位西安交通大学; 西北核技术研究所