摘要
We demonstrate the formation of ultraslow dark optical solitans with a four-level scheme in an asymmetric semiconductor double quantum well (SDQW) structure based on intersubband transitions by using only a low-intensity pulsed laser radiation. With appropriate conditions we show numerically that the dark optical soliton can travel with a ultraslow group velocity V(g)/c similar to -10(-3). Such a semiconductor system is much more practical than its atomic counterpart because of its flexible design and the controllable interface strength. This nonlinear optical process in the SDQW solid-state material may be used for the control technology of optical delay lines and optical buffers.
- 出版日期2009-3
- 单位华中科技大学; 湖北师范大学