Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

作者：Tracy L A^*; Nordberg E P; Young R W; Pinilla C Borras; Stalford H L; Ten Eyck G A; Eng K; Childs K D; Wendt J R; Grubbs R K; Stevens J; Lilly M P; Eriksson M A; Carroll M S

来源：Applied Physics Letters, 2010, 97(19): 192110.

DOI：10.1063/1.3518058

We present transport measurements of a tunable silicon metal-oxide semiconductor double quantum dot device with lateral geometry. The experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. A comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling.

• 出版日期2010-11-8