AlyGa1-yN/AlxGa1-xN/GaN Double-Heterostructure Detector With Three Ultraviolet Spectral Band Responses

作者：Gao, Bo^*; Liu, Hongxia; Fan, Jinbin; Wang, Shulong

来源：IEEE Transactions on Electron Devices, 2011, 58(12): 4290-4296.

DOI：10.1109/TED.2011.2168403

• AlyGa1-yN/AlxGa1-xN/GaN
• double heterostructure (DH)
• three ultraviolet (UV) spectral band responses
• UV detector

In this paper, an AlyGa1-yN/AlxGa1-xN/GaN (y > x) double-heterostructure (DH) p-p-i-n ultraviolet (UV) detector is designed based on the influence of the polarization effect on the AlGaN/GaN heterostructure. The influences of doping concentration and Al composition in AlGaN on the photoelectric response of the UV detector are calculated and discussed by self-consistent solving of the Schrodinger-Poisson equation and solving the carriers' continuity equation. The calculation results show that the AlyGa1-yN/AlxGa1-xN/GaN DH p-p-i-n UV detector presents a three-UV-response wavelength region with increasing bias voltage, and the three-UV-response wavelength region can be abnormally adjusted from 200 to 365 nm by changing the Al composition in the AlyGa1-yN and AlxGa1-xN layers. The calculation results are verified by the Korona's experimental testing results at the end of this paper.

• 出版日期2011-12
• 单位西安电子科技大学