High-Power and High-Speed Heterogeneously Integrated Waveguide-Coupled Photodiodes on Silicon-on-Insulator

作者：Xie Xiaojun^*; Zhou Qiugui^*; Norberg Erik^*; Jacob Mitos Matt^*; Chen Yaojia^*; Yang Zhanyu^*; Ramaswamy Anand^*; Fish Gregory^*; Campbell Joe C^*; Beling Andreas^*

来源：Journal of Lightwave Technology, 2016, 34(1): 73-78.

DOI：10.1109/JLT.2015.2491258

• Microwave photonics
• photodiode
• silicon photonics

InP-based high-power and high-speed modified unitraveling carrier photodiodes heterogeneously integrated on silicon-on-insulator waveguides are demonstrated. Internal responsivity up to 0.95A/W and bandwidth up to 48 GHz have been achieved. The maximum RF output power of a 20 x 35 mu m(2) photodiode was 16.6, 15.8, and 13.5 dBm at 10, 20, and 30 GHz, respectively. The maximum output RF power of a 10 x 35 mu m(2) photodiode was 12 dBm at 40 GHz. Using the same integration technology, we show that balanced waveguide photodiodes reach 0.78-A/W internal responsivity, 14-GHz bandwidth, and > 20-dB common-mode rejection ratio. In the differential mode, the unsaturated RF output power was 17.2 dBm at 10 GHz and 15.2 dBm at 20 GHz.

• 出版日期2016-1-1