Annealing of an AlN buffer layer in N-2-CO for growth of a high-quality AlN film on sapphire

作者：Miyake, Hideto^*; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa; Fukuyama, Hiroyuki; Kaur, Je**ains; Kuwano, Noriyuki

来源：Applied Physics Express, 2016, 9(2): 025501.

DOI：10.7567/APEX.9.025501

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The annealing of an AlN buffer layer in a carbon-saturated N-2-CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650-1700 degrees C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700 degrees C for 1h. We fabricated a 2-mu m-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)- and ( 10 (1) over bar2)- plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 x 10(8) cm(-2).

• 出版日期2016-2