Alleviating Through-Silicon-Via Electromigration for 3-D Integrated Circuits Taking Advantage of Self-Healing Effect

作者：Cheng, Yuanqing^*; Todri-Sanial, Aida; Yang, Jianlei; Zhao, Weisheng

来源：IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2016, 24(11): 3310-3322.

DOI：10.1109/TVLSI.2016.2543260

• 3-D integrated circuits (ICs)
• electro migration (EM)
• reliability
• self-healing effect
• through-silicon-via (TSV)

Three-dimensional integration is considered to be a promising technology to tackle the global interconnect scaling problem for terascale integrated circuits (ICs). Three-dimensional ICs typically employ through-silicon-vias (TSVs) to vertically connect planar circuits. Due to its immature fabrication process, several defects, such as void, misalignment, and dust contamination, may be introduced. These defects can significantly increase current densities within TSVs and cause severe electromigration (EM) effects, which can degrade the reliability of 3-D ICs considerably. In this paper, we propose an effective framework to mitigate EM effect of the defective TSV. At first, we analyze various possible TSV defects and their impacts on EM reliability. Based on the observation that EM can be significantly alleviated by self-healing effect, we design an EM mitigation module to protect defective TSVs from EM. To guarantee EM mitigation efficiency, we propose two defective TSV protection schemes, i.e., neighbor sharing and global sharing. Experimental results show that the global-sharing scheme performs the best and can improve the EM mean time to failure by more than 70x on average with only 0.7% area overhead and less than 0.5% performance degradation compared with naked design without any EM protection.

• 出版日期2016-11
• 单位北京航空航天大学