An integrated shunt-type MEMS switch with a submicron narrow gap

作者：Yamamoto Shoji^*; Maeda Kazuya; Suzuki Kenichiro

来源：Electronics and Communications in Japan, 2012, 95(11): 40-48.

DOI：10.1002/ecj.11417

• RF-MEMS
• electrostatically driven switch
• driving voltage
• frequency characteristics
• integration

Shunt-type MEMS resistive switches have good performance, low loss, and high isolation in a wide frequency band. However, like other MEMS electrostatically driven switches, they suffer from a high driving voltage. The decrease of the gap between the driving electrodes causes a stronger electrostatic force, which is useful for decreasing the driving voltage. On the other hand, the reduction of the gap causes another problem, a decrease in isolation. In this paper, the influence of gap reduction on the performance of MEMS switches is investigated. We fabricated a switch with a gap of 0.9 mu m and compared it with another switch having a gap of 2 mu m. The measured results showed that the fabricated narrow gap switches had RF frequency characteristics as good as the 2-mu m gap switches. This is owing to the slits formed in a moving electrode over a transmission line.

• 出版日期2012-11