A charge transport study in diamond, surface passivated by high-k dielectric oxides

作者：Kovi Kiran Kumar^*; Majdi Saman; Gabrysch Markus; I**erg Jan

来源：Applied Physics Letters, 2014, 105(20): 202102.

DOI：10.1063/1.4901961

The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.

• 出版日期2014-11-17