A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology

作者：Kim Joohwa^*; Buckwalter James F

来源：IEEE Microwave and Wireless Components Letters, 2011, 21(6): 329-331.

DOI：10.1109/LMWC.2011.2139197

• CMOS
• distributed amplifier (DA)
• millimeter-wave integrated circuit
• silicon-on-insulator (SOI)

A low-power cascode distributed amplifier is demonstrated in a 45 nm silicon-on-insulator (SOI) CMOS process. The amplifier achieves a 3 dB bandwidth of 92 GHz. The peak gain is 9 dB with a gain-ripple of less 1.5 dB over the 3 dB bandwidth. The group-delay variation is under +/-4.7 ps over the 3 dB bandwidth. The amplifier consumes 73.5 mW from a 1.2 V supply and results in a gain-bandwidth efficiency figure of merit of 3.53 GHz/mW. The chip occupies an area of 0.45 mm(2) including the pads.

• 出版日期2011-6