X-ray dosimetric properties of vapor-grown CdGa2S4 single crystals

作者:Mustafaeva S N*; Asadov M M; Guseinov D T
来源:Inorganic Materials, 2010, 46(6): 587-589.
DOI:10.1134/S002016851006004X

摘要

CdGa2S4 single crystals have been grown from a presynthesized source material by closed-tube iodine vapor transport, and their X-ray dosimetric properties have been studied. Their X-ray sensitivity coefficient K ranges from K = 1.26 x 10(-11) to 1.39 x 10(-10) A min/(V R) at effective X-ray hardnesses V (a) = 25-50 keV and dose rates E = 0.75-78.05 R/min, and increases with X-ray dose. The K(V (a)) curve has a negative slope, in contrast to the K(E) curve. The photocurrent-dose curves of the CdGa2S4 single crystals demonstrate that the steady-state X-ray photocurrent is a power-law function of X-ray dose rate: Delta I (E,0) similar to E (alpha) . With increasing V (a), the slope of the curves sharply decreases and alpha approaches unity.

  • 出版日期2010-6

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